npn 2N2894 comset semiconductors 1/2 the 2N2894 are silicon planar epitaxial pnp transistors mounted in to-18 metal package. they are intended for high speed, low saturation switching applications up to 100 ma. compliance to rohs. absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage (i b = 0) -12 v v cbo collector-base voltage (i e = 0) -12 v v ces collector-emitter voltage(v be = 0) -12 v v ebo emitter-base voltage (i c = 0) -4 v i c collector current -200 ma @ t amb = 25 0.36 @ t case = 25 1.2 p d total power dissipation @ t case <100 1 watts t j junction temperature -65 to +200 c t stg storage temperature range -65 to +200 c thermal characteristics symbol ratings value unit r thj-a thermal resistance, junction-ambient 486 c/ w r thj-c thermal resistance, junction-case 146 c/ w electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit i cbo collector cutoff current v cb =-6 v, i e =0v, t j =125c - - -10 a i ces collector cutoff current v be =0 v, v ce =-6 v - - -80 na v ceo (*) collector emitter breakdown voltage i c =-10 ma, i b =0 -12 - - v v ces collector emitter breakdown voltage v be =0 v, i c =-10 a -12 - - v v cbo collector base breakdown voltage i c =-10 a, i e =0 -12 - - v v ebo emitter base breakdown voltage i e =-100 a, i c =0 -4 - - v h h i i g g h h - - s s p p e e e e d d s s a a t t u u r r a a t t e e d d s s w w i i t t c c h h e e s s
npn 2N2894 comset semiconductors 2 /2 symbol ratings test condition(s) min typ mx unit i c =-10 ma, v ce =-0.3 v 30 - - i c =-30 ma, v ce =-0.5 v 40 - 150 i c =-100 ma, v ce =-1 v 25 - - h fe (*) dc current gain i c =150 ma, v ce =10 v t amb = -55 17 - - - i c =-10 ma, i b =-1 ma - - -0.15 i c =-30 ma, i b =-3 ma - - -0.2 v ce(sat) (*) collector-emitter saturation voltage i c =-100 ma, i b =-10 ma - - -0.5 i c =-10 ma, i b =-1 ma -0.78 - -0.98 i c =-30 ma, i b =-3 ma -0.85 - -1.2 v be(sat) (*) base-emitter saturation voltage i c =-100 ma, i b =-10 ma - - -1.7 v symbol ratings test condition(s) min typ mx unit f t transition frequency i c =-30 ma, v ce =-10 v f = 100mhz 400 - - mhz c cbo collector-base capacitance i e = 0 ,v cb =-5 v f = 1mhz - - 6 pf c ebo emitter-base capacitance i c = 0 ,v eb =-0.5 v f = 1mhz - - 6 pf t on turn-on time i c =-30 ma, v cc =-2 v i b1 = -1.5ma - - 60 t off turn-off time i c =-30 ma, v cc =-2 v i b1 = -i b2 = -1.5ma - - 90 ns (*) pulse conditions : tp < 300 s, =1% mechanical data case to-18 information furnished is believed to be accurate a nd reliable. however, cs assumes no responsability for the consequences of use of such info rmation nor for errors that could appear. data are subject to change without notice. dimensions mm inches a 12,7 0,5 b 0,49 0,019 d 5,3 0,208 e 4,9 0,193 f 5,8 0,228 g 2,54 0,1 h 1,2 0,047 i 1,16 0,045 l 45 45
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